Технічний опис SCS215AGHRC ROHM Semiconductor
Description: DIODE SIL CARB 650V 15A TO220AC, Current - Average Rectified (Io): 15A, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 300 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220AC.
Інші пропозиції SCS215AGHRC
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SCS215AGHRC | Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 15A TO220ACCurrent - Average Rectified (Io): 15A Capacitance @ Vr, F: 550pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 300 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220AC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| SCS215AGHRC |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO220AC
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Description: DIODE SIL CARB 650V 15A TO220AC
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.