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SCS215AMC

SCS215AMC ROHM Semiconductor

datasheet?p=SCS215AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers SiC, SBD 650V 15A TO-220FM
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Технічний опис SCS215AMC ROHM Semiconductor

Description: DIODE SIL CARB 650V 12A TO220FM, Current - Reverse Leakage @ Vr: 240 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220FM, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 438pF @ 1V, 1MHz, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns.

Інші пропозиції SCS215AMC

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SCS215AMC SCS215AMC Rohm Semiconductor datasheet?p=SCS215AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 12A TO220FM
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
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SCS215AMC SCS215AMC ROHM SEMICONDUCTOR SCS215AM.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 15A
Max. forward voltage: 1.55V
Power dissipation: 39W
Max. forward impulse current: 200A
Max. off-state voltage: 650V
Max. load current: 36A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
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SCS215AMC datasheet?p=SCS215AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS215AMC
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220FM
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
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SCS215AMC SCS215AM.pdf
SCS215AMC
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 15A
Max. forward voltage: 1.55V
Power dissipation: 39W
Max. forward impulse current: 200A
Max. off-state voltage: 650V
Max. load current: 36A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
товару немає в наявності
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