SCS220AEC ROHM Semiconductor
на замовлення 386 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SCS220AEC ROHM Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Current - Reverse Leakage @ Vr: 400 µA @ 600 V.
Інші пропозиції SCS220AEC
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SCS220AEC | Виробник : ROHM SEMICONDUCTOR |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1.55V Max. load current: 81A Max. forward impulse current: 260A Power dissipation: 130W Kind of package: tube кількість в упаковці: 1 шт |
товару немає в наявності |
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SCS220AEC | Виробник : Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
товару немає в наявності |
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SCS220AEC | Виробник : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1.55V Max. load current: 81A Max. forward impulse current: 260A Power dissipation: 130W Kind of package: tube |
товару немає в наявності |