Технічний опис SCS220AEC ROHM Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247, Current - Reverse Leakage @ Vr: 400 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SCS220AEC
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SCS220AEC | Rohm Semiconductor |
 Description: DIODE SIL CARBIDE 650V 20A TO247Current - Reverse Leakage @ Vr: 400 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-247 Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 730pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. |
 |
SCS220AEC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube Technology: SiC Power dissipation: 130W Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 1.55V Load current: 20A Max. load current: 81A Max. forward impulse current: 260A Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. |
| SCS220AEC |
|
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARBIDE 650V 20A TO247
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| SCS220AEC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube
Technology: SiC
Power dissipation: 130W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Load current: 20A
Max. load current: 81A
Max. forward impulse current: 260A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube
Technology: SiC
Power dissipation: 130W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Load current: 20A
Max. load current: 81A
Max. forward impulse current: 260A
Max. off-state voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.