SCS220AJTLL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
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Технічний опис SCS220AJTLL Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB, Operating Temperature - Junction: 175°C (Max), Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Current - Reverse Leakage @ Vr: 400 µA @ 600 V.
Інші пропозиції SCS220AJTLL за ціною від 321.19 грн до 765.13 грн
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SCS220AJTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO263AB Current - Reverse Leakage @ Vr: 400 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Not For New Designs Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-263AB Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 730pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1513 шт: термін постачання 21-31 дні (днів) |
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SCS220AJTLL | ROHM Semiconductor |
SiC Schottky Diodes SiC, SBD 650V 20A DPAK |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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| SCS220AJTLL |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Not For New Designs
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-263AB
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SIL CARB 650V 20A TO263AB
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Not For New Designs
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-263AB
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1513 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 764.98 грн |
| 10+ | 487.39 грн |
| 100+ | 370.24 грн |
| 500+ | 321.19 грн |
| SCS220AJTLL |
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Виробник: ROHM Semiconductor
SiC Schottky Diodes SiC, SBD 650V 20A DPAK
SiC Schottky Diodes SiC, SBD 650V 20A DPAK
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 765.13 грн |
| 10+ | 550.96 грн |
| 100+ | 410.75 грн |
| 500+ | 367.26 грн |
| 1000+ | 332.05 грн |
| 2000+ | 331.36 грн |