SCS220AMC ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 729.69 грн |
| 10+ | 650.20 грн |
| 100+ | 468.74 грн |
| 500+ | 407.30 грн |
| 1000+ | 370.02 грн |
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Технічний опис SCS220AMC ROHM Semiconductor
Description: DIODE SIL CARB 650V 20A TO220FM, Current - Reverse Leakage @ Vr: 400 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Packaging: Tube, Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Supplier Device Package: TO-220FM, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max).
Інші пропозиції SCS220AMC
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCS220AMC | Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 20A TO220FMCurrent - Reverse Leakage @ Vr: 400 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Packaging: Tube Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FM Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 730pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| SCS220AMC |
|
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220FM
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Description: DIODE SIL CARB 650V 20A TO220FM
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
на замовлення 50 шт:
термін постачання 21-31 дні (днів)