SCS220ANHRTRL ROHM Semiconductor
Виробник: ROHM Semiconductor
SiC Schottky Diodes 650V, 20A, SMD, Silicon-carbide (SiC) SBD for Automotive (3-pin package)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 526.73 грн |
| 10+ | 423.14 грн |
| 100+ | 334.82 грн |
| 1000+ | 324.46 грн |
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Технічний опис SCS220ANHRTRL ROHM Semiconductor
Description: DIODE SIL CARBIDE 650V 20A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: LPDS, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Current - Reverse Leakage @ Vr: 400 µA @ 600 V, Qualification: AEC-Q101.
Інші пропозиції SCS220ANHRTRL за ціною від 264.68 грн до 588.69 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCS220ANHRTRL | Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 20A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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| SCS220ANHRTRL |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 588.69 грн |
| 10+ | 385.38 грн |
| 100+ | 315.09 грн |
| 500+ | 264.68 грн |