SCS220KGC17 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 861.78 грн |
| 10+ | 623.21 грн |
| 100+ | 473.57 грн |
| 1000+ | 472.88 грн |
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Технічний опис SCS220KGC17 ROHM Semiconductor
Description: DIODE SIC 1.2KV 20A TO220ACFP, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 400 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220ACFP, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 1050pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole.
Інші пропозиції SCS220KGC17 за ціною від 538.96 грн до 866.72 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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SCS220KGC17 | Rohm Semiconductor |
 Description: DIODE SIC 1.2KV 20A TO220ACFPPackage / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 400 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-220ACFP Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole |
на замовлення 991 шт: термін постачання 21-31 дні (днів) |
|
| SCS220KGC17 |
|
Виробник: Rohm Semiconductor
Description: DIODE SIC 1.2KV 20A TO220ACFP
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Description: DIODE SIC 1.2KV 20A TO220ACFP
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 866.72 грн |
| 10+ | 586.93 грн |
| 100+ | 538.96 грн |