SCS302AJTLL ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.24 грн |
| 10+ | 138.14 грн |
| 100+ | 86.29 грн |
| 500+ | 73.18 грн |
| 1000+ | 69.72 грн |
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Технічний опис SCS302AJTLL ROHM Semiconductor
Description: DIODE SIL CARB 650V 2.15A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 110pF @ 1V, 1MHz, Current - Average Rectified (Io): 2.15A, Supplier Device Package: LPTL, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A, Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V.
Інші пропозиції SCS302AJTLL за ціною від 102.89 грн до 243.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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SCS302AJTLL | Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 2.15A LPTLPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 2.15A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V |
на замовлення 499 шт: термін постачання 21-31 дні (днів) |
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| SCS302AJTLL |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.09 грн |
| 10+ | 147.55 грн |
| 100+ | 102.89 грн |