SCS310AMC7G ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 357.60 грн |
| 10+ | 258.01 грн |
| 100+ | 181.56 грн |
| 500+ | 161.54 грн |
| 1000+ | 142.21 грн |
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Технічний опис SCS310AMC7G ROHM Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220FM, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube.
Інші пропозиції SCS310AMC7G за ціною від 148.36 грн до 413.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCS310AMC7G | Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 10A TO220FMCurrent - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-220FM Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 500pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
|
| SCS310AMC7G |
|
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE SIL CARB 650V 10A TO220FM
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220FM
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 413.17 грн |
| 50+ | 208.34 грн |
| 100+ | 190.07 грн |
| 500+ | 148.36 грн |