| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 782.55 грн |
| 25+ | 746.42 грн |
| 50+ | 716.38 грн |
| 100+ | 666.44 грн |
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Технічний опис SCS320KNTRL Rohm Semiconductor
Description: 1200V, 20A, SMD, SILICON-CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1030pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V.
Інші пропозиції SCS320KNTRL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCS320KNTRL | Rohm Semiconductor |
 Description: 1200V, 20A, SMD, SILICON-CARBIDEPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1030pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
|
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SCS320KNTRL | Rohm Semiconductor |
Description: 1200V, 20A, SMD, SILICON-CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1030pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SCS320KNTRL | ROHM Semiconductor |
SiC Schottky Diodes 1200V, 20A, SMD, Silicon-carbide (SiC) SBD : Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| SCS320KNTRL |
|
Виробник: Rohm Semiconductor
Description: 1200V, 20A, SMD, SILICON-CARBIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1030pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: 1200V, 20A, SMD, SILICON-CARBIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1030pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCS320KNTRL |
|
Виробник: Rohm Semiconductor
Description: 1200V, 20A, SMD, SILICON-CARBIDE
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1030pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: 1200V, 20A, SMD, SILICON-CARBIDE
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1030pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| SCS320KNTRL |
|
Виробник: ROHM Semiconductor
SiC Schottky Diodes 1200V, 20A, SMD, Silicon-carbide (SiC) SBD : Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
SiC Schottky Diodes 1200V, 20A, SMD, Silicon-carbide (SiC) SBD : Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.