SCT012H90G3AG STMicroelectronics
Виробник: STMicroelectronics
Description: H2PAK-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: H2PAK-7
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 1+ | 1574.47 грн |
| 10+ | 1095.44 грн |
| 100+ | 1092.57 грн |
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Технічний опис SCT012H90G3AG STMicroelectronics
Description: H2PAK-7, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 4.2V @ 10mA, Power Dissipation (Max): 625W (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Інші пропозиції SCT012H90G3AG за ціною від 1665.57 грн до 1901.12 грн
| Фото | Назва | Виробник | Інформація |
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| SCT012H90G3AG | Виробник : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package |
на замовлення 100 шт: термін постачання 245-254 дні (днів) |
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SCT012H90G3AG | Виробник : STMicroelectronics |
Description: H2PAK-7 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): +18V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: H2PAK-7 Vgs(th) (Max) @ Id: 4.2V @ 10mA Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |