SCT018W65G3-4AG STMicroelectronics
Виробник: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
| Кількість | Ціна |
|---|---|
| 1+ | 1248.98 грн |
| 10+ | 912.13 грн |
| 100+ | 563.16 грн |
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Технічний опис SCT018W65G3-4AG STMicroelectronics
Description: TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 30A, 18V, Power Dissipation (Max): 398W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2077 pF @ 400 V, Qualification: AEC-Q101.
Інші пропозиції SCT018W65G3-4AG
| Фото | Назва | Виробник | Інформація |
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SCT018W65G3-4AG | Виробник : STMicroelectronics |
Description: TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 30A, 18V Power Dissipation (Max): 398W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2077 pF @ 400 V Qualification: AEC-Q101 |
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