SCT020HU120G3AG STMicroelectronics
Виробник: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
Відгуки про товар
Написати відгук
Технічний опис SCT020HU120G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: HU3PAK, Vgs(th) (Max) @ Id: 4.2V @ 2.3mA, Power Dissipation (Max): 555W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA.
Інші пропозиції SCT020HU120G3AG за ціною від 1053.44 грн до 1053.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
 |
SCT020HU120G3AG | STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT020HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 100 A, 1.2 kV, 0.028 ohm, HU3PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: TBA Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 555W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: No SVHC (21-Jan-2025) |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
| SCT020HU120G3AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 100A; 555W; D2PAK-7 Technology: SiC Case: D2PAK-7 Kind of channel: enhancement Polarisation: N Type of transistor: N-MOSFET Mounting: SMD Gate-source voltage: 22V Gate charge: 121nC On-state resistance: 28mΩ Power dissipation: 555W Drain-source voltage: 1.2kV Drain current: 100A Application: automotive industry |
на замовлення 600 шт: термін постачання 14-30 дні (днів) |
|
| SCT020HU120G3AG |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - SCT020HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 100 A, 1.2 kV, 0.028 ohm, HU3PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: TBA
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.2V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 555W
Bauform - Transistor: HU3PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.028ohm
SVHC: No SVHC (21-Jan-2025)
Description: STMICROELECTRONICS - SCT020HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 100 A, 1.2 kV, 0.028 ohm, HU3PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: TBA
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.2V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 555W
Bauform - Transistor: HU3PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.028ohm
SVHC: No SVHC (21-Jan-2025)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| SCT020HU120G3AG |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 100A; 555W; D2PAK-7
Technology: SiC
Case: D2PAK-7
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Gate-source voltage: 22V
Gate charge: 121nC
On-state resistance: 28mΩ
Power dissipation: 555W
Drain-source voltage: 1.2kV
Drain current: 100A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 100A; 555W; D2PAK-7
Technology: SiC
Case: D2PAK-7
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Gate-source voltage: 22V
Gate charge: 121nC
On-state resistance: 28mΩ
Power dissipation: 555W
Drain-source voltage: 1.2kV
Drain current: 100A
Application: automotive industry
на замовлення 600 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 600+ | 1053.44 грн |