SCT020HU120G3AG STMicroelectronics
Виробник: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
| Кількість | Ціна |
|---|---|
| 1+ | 1438.18 грн |
| 10+ | 1174.93 грн |
| 100+ | 883.31 грн |
| 600+ | 820.42 грн |
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Технічний опис SCT020HU120G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V, Power Dissipation (Max): 555W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 2.3mA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції SCT020HU120G3AG за ціною від 1064.41 грн до 2046.39 грн
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SCT020HU120G3AG | Виробник : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT020HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 100 A, 1.2 kV, 0.028 ohm, HU3PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: TBA Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 555W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: No SVHC (21-Jan-2025) |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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| SCT020HU120G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 100A; 555W; D2PAK-7 Technology: SiC Case: D2PAK-7 Kind of channel: enhancement Polarisation: N Type of transistor: N-MOSFET Mounting: SMD Gate-source voltage: 22V Gate charge: 121nC On-state resistance: 28mΩ Drain current: 100A Power dissipation: 555W Drain-source voltage: 1.2kV Application: automotive industry |
на замовлення 600 шт: термін постачання 14-30 дні (днів) |
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SCT020HU120G3AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V Power Dissipation (Max): 555W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 2.3mA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
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SCT020HU120G3AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V Power Dissipation (Max): 555W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 2.3mA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |