SCT025W120G3-4AG STMicroelectronics
Виробник: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
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Технічний опис SCT025W120G3-4AG STMicroelectronics
Description: TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 18V, Power Dissipation (Max): 388W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції SCT025W120G3-4AG за ціною від 1269.40 грн до 1819.89 грн
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SCT025W120G3-4AG | Виробник : STMicroelectronics |
Description: TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 18V Power Dissipation (Max): 388W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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| SCT025W120G3-4AG | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 240A; 389W Technology: SiC Case: HIP247-4 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate-source voltage: -10...22V Gate charge: 73nC On-state resistance: 37mΩ Drain current: 56A Pulsed drain current: 240A Power dissipation: 389W Drain-source voltage: 1.2kV Application: automotive industry |
товару немає в наявності |