SCT027H65G3AG STMicroelectronics

Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 39.3mOhm @ 30A, 18V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1277 pF @ 400 V, Qualification: AEC-Q101.