SCT040H65G3AG STMICROELECTRONICS
Виробник: STMICROELECTRONICSDescription: STMICROELECTRONICS - SCT040H65G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 30 A, 650 V, 0.055 ohm, H2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.2V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 221W
Bauform - Transistor: H2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.055ohm
SVHC: No SVHC (23-Jan-2024)
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 790.44 грн |
| 50+ | 692.40 грн |
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Технічний опис SCT040H65G3AG STMICROELECTRONICS
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SCT040H65G3AG за ціною від 505.07 грн до 1137.84 грн
| Фото | Назва | Виробник | Інформація |
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SCT040H65G3AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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SCT040H65G3AG | Виробник : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT040H65G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 30 A, 650 V, 0.055 ohm, H2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 221W Bauform - Transistor: H2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.055ohm SVHC: No SVHC (23-Jan-2024) |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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SCT040H65G3AG | Виробник : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A |
на замовлення 1000 шт: термін постачання 245-254 дні (днів) |
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| SCT040H65G3AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 30A Automotive 8-Pin(7+Tab) H2PAK T/R |
товару немає в наявності |
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| SCT040H65G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; H2PAK7 Polarisation: unipolar Mounting: SMD Drain-source voltage: 650V Drain current: 30A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 221W Kind of package: reel; tape Gate charge: 39.5nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 160A Case: H2PAK7 кількість в упаковці: 1 шт |
товару немає в наявності |
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SCT040H65G3AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| SCT040H65G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; H2PAK7 Polarisation: unipolar Mounting: SMD Drain-source voltage: 650V Drain current: 30A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 221W Kind of package: reel; tape Gate charge: 39.5nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 160A Case: H2PAK7 |
товару немає в наявності |