SCT040H65G3AG STMicroelectronics
Виробник: STMicroelectronicsMOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
на замовлення 1000 шт:
термін постачання 385-394 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1177.95 грн |
| 10+ | 1067.16 грн |
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Технічний опис SCT040H65G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V.
Інші пропозиції SCT040H65G3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SCT040H65G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SCT040H65G3AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 30A Automotive 8-Pin(7+Tab) H2PAK T/R |
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SCT040H65G3AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V |
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SCT040H65G3AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V |
товар відсутній |
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| SCT040H65G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |