SCT055W65G3-4AG STMicroelectronics
Виробник: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 971.31 грн |
| 10+ | 714.50 грн |
| 100+ | 537.09 грн |
| 600+ | 508.78 грн |
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Технічний опис SCT055W65G3-4AG STMicroelectronics
Description: TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції SCT055W65G3-4AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCT055W65G3-4AG | STMicroelectronics |
Description: TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
| SCT055W65G3-4AG |
Виробник: STMicroelectronics
Description: TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 40 V
Qualification: AEC-Q101
Description: TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.