SCT060HU75G3AG STMicroelectronics
Виробник: STMicroelectronics
MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A
MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A
на замовлення 599 шт:
термін постачання 385-394 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 973.49 грн |
| 10+ | 845.47 грн |
| 25+ | 715.21 грн |
| 50+ | 675.92 грн |
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Технічний опис SCT060HU75G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V, Power Dissipation (Max): 185W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HU3PAK, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): 4.2V @ 1mA, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 400 V.
Інші пропозиції SCT060HU75G3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SCT060HU75G3AG | Виробник : STMicroelectronics |
 SCT060HU75G3AG |
товар відсутній |
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| SCT060HU75G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SCT060HU75G3AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V Power Dissipation (Max): 185W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): 4.2V @ 1mA Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 400 V |
товар відсутній |
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| SCT060HU75G3AG | Виробник : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V Power Dissipation (Max): 185W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): 4.2V @ 1mA Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 400 V |
товар відсутній |
||
| SCT060HU75G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товар відсутній |