SCT070H120G3AG STMicroelectronics
Виробник: STMicroelectronicsSiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
на замовлення 100 шт:
термін постачання 245-254 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1139.82 грн |
| 10+ | 826.58 грн |
| 25+ | 706.99 грн |
| 50+ | 685.66 грн |
| 100+ | 589.28 грн |
| 250+ | 578.98 грн |
| 500+ | 545.88 грн |
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Технічний опис SCT070H120G3AG STMicroelectronics
Description: H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.
Інші пропозиції SCT070H120G3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SCT070H120G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; H2PAK7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 100A Power dissipation: 223W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 87mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
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SCT070H120G3AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 30A Automotive 8-Pin(7+Tab) H2PAK T/R |
товару немає в наявності |
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SCT070H120G3AG | Виробник : STMicroelectronics |
Description: H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
товару немає в наявності |
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SCT070H120G3AG | Виробник : STMicroelectronics |
Description: H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
товару немає в наявності |
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| SCT070H120G3AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; H2PAK7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 100A Power dissipation: 223W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 87mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |