SCT070W120G3-4AG STMicroelectronics
Виробник: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
| Кількість | Ціна |
|---|---|
| 1+ | 1190.44 грн |
| 10+ | 850.42 грн |
| 25+ | 738.80 грн |
| 100+ | 655.86 грн |
| 250+ | 596.61 грн |
| 600+ | 542.94 грн |
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Технічний опис SCT070W120G3-4AG STMicroelectronics
Description: TO247-4, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4.2V @ 1mA, Power Dissipation (Max): 236W (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції SCT070W120G3-4AG
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SCT070W120G3-4AG | Виробник : STMicroelectronics |
Description: TO247-4 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 4.2V @ 1mA Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
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