SCT070W120G3AG STMICROELECTRONICS
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - SCT070W120G3AG - SILICON CARBIDE POWER MOSFET
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
SVHC: No SVHC (21-Jan-2025)
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
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Технічний опис SCT070W120G3AG STMICROELECTRONICS
Description: SIC MOSFET, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 236W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HiP247™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.
Інші пропозиції SCT070W120G3AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCT070W120G3AG | STMicroelectronics |
Description: SIC MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HiP247™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
| SCT070W120G3AG |
|
Виробник: STMicroelectronics
Description: SIC MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: HiP247™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101
Description: SIC MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: HiP247™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.