SCT070W120G3AG STMICROELECTRONICS
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - SCT070W120G3AG - SILICON CARBIDE POWER MOSFET
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (21-Jan-2025)
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Технічний опис SCT070W120G3AG STMICROELECTRONICS
Description: SIC MOSFET, Vgs(th) (Max) @ Id: 4.2V @ 1mA, Power Dissipation (Max): 236W (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: HiP247™.
Інші пропозиції SCT070W120G3AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCT070W120G3AG | STMicroelectronics |
Description: SIC MOSFET Vgs(th) (Max) @ Id: 4.2V @ 1mA Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: HiP247™ |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
| SCT070W120G3AG |
|
Виробник: STMicroelectronics
Description: SIC MOSFET
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: HiP247™
Description: SIC MOSFET
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: HiP247™
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.