SCT1000N170 STMicroelectronics
Виробник: STMicroelectronics
Description: HIP247 IN LINE
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
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Технічний опис SCT1000N170 STMicroelectronics
Description: HIP247 IN LINE, Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V, Supplier Device Package: HiP247™, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active.
Інші пропозиції SCT1000N170 за ціною від 269.73 грн до 621.24 грн
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SCT1000N170 | Виробник : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package |
на замовлення 517 шт: термін постачання 21-30 дні (днів) |
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