Технічний опис SCT10N120H STMicroelectronics
Description: SICFET N-CH 1200V 12A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: H2Pak-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V.
Інші пропозиції SCT10N120H
| Фото | Назва | Виробник | Інформація |
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SCT10N120H | Виробник : STMicroelectronics |
 Trans MOSFET N-CH SiC 1.2KV 13A 3-Pin(2+Tab) H2PAK T/R |
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| SCT10N120H | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 13A 3-Pin(2+Tab) H2PAK T/R |
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| SCT10N120H | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| SCT10N120H | Виробник : STMicroelectronics |
Description: SICFET N-CH 1200V 12A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V |
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SCT10N120H | Виробник : STMicroelectronics |
MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm |
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| SCT10N120H | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET |
товар відсутній |