SCT2080KEGC11 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Description: MOSFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1644.76 грн |
10+ | 1407.4 грн |
100+ | 1230.93 грн |
Відгуки про товар
Написати відгук
Технічний опис SCT2080KEGC11 Rohm Semiconductor
Description: MOSFET N-CH 1200V 40A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V, Power Dissipation (Max): 262W (Tc), Vgs(th) (Max) @ Id: 4V @ 4.4mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V.
Інші пропозиції SCT2080KEGC11 за ціною від 1201.64 грн до 1803.35 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SCT2080KEGC11 | Виробник : ROHM Semiconductor | MOSFET SILICON CARBIDE |
на замовлення 252 шт: термін постачання 21-30 дні (днів) |
|
|||||||||
SCT2080KEGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 80A; 262W Technology: SiC Mounting: THT Power dissipation: 262W Case: TO247 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 0.117Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 106nC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 80A кількість в упаковці: 1 шт |
товар відсутній |
||||||||||
SCT2080KEGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 80A; 262W Technology: SiC Mounting: THT Power dissipation: 262W Case: TO247 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 0.117Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 106nC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 80A |
товар відсутній |