SCT2160KEC Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: SICFET N-CH 1200V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
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Технічний опис SCT2160KEC Rohm Semiconductor
Description: SICFET N-CH 1200V 22A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-247, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V.
Інші пропозиції SCT2160KEC
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SCT2160KEC | Виробник : ROHM Semiconductor |
MOSFET 1200V20A160mOhm Silicon Carbide SiC |
товару немає в наявності |