SCT2160KEGC11 Rohm Semiconductor

Description: 1200V, 22A, THD, SILICON-CARBIDE, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -6V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247N.