SCT2280KEC ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 758.68 грн |
| 10+ | 640.67 грн |
| 25+ | 505.33 грн |
| 100+ | 463.91 грн |
| 250+ | 436.99 грн |
| 360+ | 408.68 грн |
| 1080+ | 367.95 грн |
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Технічний опис SCT2280KEC ROHM Semiconductor
Description: SICFET N-CH 1200V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V, Power Dissipation (Max): 108W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.4mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V.
Інші пропозиції SCT2280KEC
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCT2280KEC | Rohm Semiconductor |
 Description: SICFET N-CH 1200V 14A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V Power Dissipation (Max): 108W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. |
| SCT2280KEC |
|
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
Power Dissipation (Max): 108W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
Description: SICFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
Power Dissipation (Max): 108W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.