SCT2450KEC ROHM - Japan
Виробник: ROHM - Japan
SiC-N-Ch 1200V 10A 85W 0,585R TO247 SCT2450KEC : Rohm SCT2450KEC TSCT2450kec
кількість в упаковці: 2 шт
на замовлення 2 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 722.66 грн |
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Технічний опис SCT2450KEC ROHM - Japan
Description: SICFET N-CH 1200V 10A TO247, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -6V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Obsolete, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 900µA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3.
Інші пропозиції SCT2450KEC
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCT2450KEC | Rohm Semiconductor |
Description: SICFET N-CH 1200V 10A TO247 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Obsolete Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 900µA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SCT2450KEC | ROHM Semiconductor |
MOSFET 1200V 10A 450mOhm Silicon Carbide SiC |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SCT2450KEC | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247 Technology: SiC Case: TO247 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -6...22V Gate charge: 27nC On-state resistance: 0.45Ω Drain current: 7A Pulsed drain current: 25A Power dissipation: 85W Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. |
| SCT2450KEC |
|
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 10A TO247
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 900µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Description: SICFET N-CH 1200V 10A TO247
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 900µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
товару немає в наявності
В кошику
од. на суму грн.
| SCT2450KEC |
|
Виробник: ROHM Semiconductor
MOSFET 1200V 10A 450mOhm Silicon Carbide SiC
MOSFET 1200V 10A 450mOhm Silicon Carbide SiC
товару немає в наявності
В кошику
од. на суму грн.
| SCT2450KEC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Technology: SiC
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -6...22V
Gate charge: 27nC
On-state resistance: 0.45Ω
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 85W
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Technology: SiC
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -6...22V
Gate charge: 27nC
On-state resistance: 0.45Ω
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 85W
Drain-source voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.