SCT2450KEGC11 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 811.84 грн |
| 10+ | 577.16 грн |
| 100+ | 376.93 грн |
| 450+ | 376.24 грн |
| 900+ | 375.55 грн |
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Технічний опис SCT2450KEGC11 ROHM Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -6V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 4V @ 900µA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SCT2450KEGC11 за ціною від 606.30 грн до 900.89 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
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SCT2450KEGC11 | Rohm Semiconductor |
 Description: 1200V, 10A, THD, SILICON-CARBIDEInput Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 4V @ 900µA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 441 шт: термін постачання 21-31 дні (днів) |
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| SCT2450KEGC11 |
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Виробник: Rohm Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4V @ 900µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: 1200V, 10A, THD, SILICON-CARBIDE
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4V @ 900µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 441 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 900.89 грн |
| 10+ | 606.30 грн |