SCT2450KEHRC11 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 873.05 грн |
| 10+ | 641.46 грн |
| 100+ | 469.43 грн |
| 450+ | 440.44 грн |
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Технічний опис SCT2450KEHRC11 ROHM Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 900µA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SCT2450KEHRC11 за ціною від 648.70 грн до 963.03 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
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SCT2450KEHRC11 | Rohm Semiconductor |
 Description: 1200V, 10A, THD, SILICON-CARBIDEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 900µA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 312 шт: термін постачання 21-31 дні (днів) |
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| SCT2450KEHRC11 |
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Виробник: Rohm Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V, 10A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 312 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 963.03 грн |
| 10+ | 648.70 грн |