Інші пропозиції SCT2750NYTB за ціною від 238.86 грн до 525.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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SCT2750NYTB | Rohm Semiconductor |
 Description: SICFET N-CH 1700V 5.9A TO268Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 18 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-268 Vgs(th) (Max) @ Id: 4V @ 630µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tape & Reel (TR) |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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SCT2750NYTB | Rohm Semiconductor |
Description: SICFET N-CH 1700V 5.9A TO268 Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 18 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-268 Vgs(th) (Max) @ Id: 4V @ 630µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Cut Tape (CT) |
на замовлення 544 шт: термін постачання 21-31 дні (днів) |
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SCT2750NYTB | ROHM Semiconductor |
SiC MOSFETs N-Ch 1700V 6A 57W SiC Silicon Carbide |
на замовлення 7128 шт: термін постачання 21-30 дні (днів) |
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| SCT2750NYTB |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1700V 5.9A TO268
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Description: SICFET N-CH 1700V 5.9A TO268
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 260.49 грн |
| SCT2750NYTB |
|
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1700V 5.9A TO268
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Cut Tape (CT)
Description: SICFET N-CH 1700V 5.9A TO268
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Cut Tape (CT)
на замовлення 544 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 518.01 грн |
| 10+ | 353.67 грн |
| 100+ | 283.52 грн |
| SCT2750NYTB |
|
Виробник: ROHM Semiconductor
SiC MOSFETs N-Ch 1700V 6A 57W SiC Silicon Carbide
SiC MOSFETs N-Ch 1700V 6A 57W SiC Silicon Carbide
на замовлення 7128 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 525.12 грн |
| 10+ | 434.26 грн |
| 100+ | 314.80 грн |
| 500+ | 277.52 грн |
| 800+ | 249.90 грн |
| 2400+ | 238.86 грн |