на замовлення 313 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 443.80 грн |
| 10+ | 292.83 грн |
| 100+ | 206.50 грн |
| 500+ | 147.50 грн |
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Технічний опис SCT2H12NWBTL1 ROHM Semiconductor
Description: SICFET N-CH 1700V 4A TO268, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 410µA, Supplier Device Package: TO-263CA-7LSHYAD, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 197 pF @ 800 V.
Інші пропозиції SCT2H12NWBTL1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SCT2H12NWBTL1 | Виробник : Rohm Semiconductor |
 Description: SICFET N-CH 1700V 4A TO268Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-263CA-7LSHYAD Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 197 pF @ 800 V |
товару немає в наявності |
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| SCT2H12NWBTL1 | Виробник : Rohm Semiconductor |
Description: SICFET N-CH 1700V 4A TO268 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-263CA-7LSHYAD Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 197 pF @ 800 V |
товару немає в наявності |