Технічний опис SCT2H12NYTB Rohm
Description: SICFET N-CH 1700V 4A TO268, Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tape & Reel (TR), Vgs (Max): +22V, -6V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-268, Vgs(th) (Max) @ Id: 4V @ 410µA, Power Dissipation (Max): 44W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V, Drain to Source Voltage (Vdss): 1700 V.
Інші пропозиції SCT2H12NYTB
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SCT2H12NYTB | Rohm Semiconductor |
 Description: SICFET N-CH 1700V 4A TO268Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tape & Reel (TR) Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-268 Vgs(th) (Max) @ Id: 4V @ 410µA Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V Drain to Source Voltage (Vdss): 1700 V |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. |
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SCT2H12NYTB | Rohm Semiconductor |
Description: SICFET N-CH 1700V 4A TO268 Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-268 Vgs(th) (Max) @ Id: 4V @ 410µA Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SCT2H12NYTB | ROHM Semiconductor |
SiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide |
товару немає в наявності |
В кошику од. на суму грн. |
| SCT2H12NYTB |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Description: SICFET N-CH 1700V 4A TO268
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| SCT2H12NYTB |
|
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Cut Tape (CT)
Description: SICFET N-CH 1700V 4A TO268
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SCT2H12NYTB |
|
Виробник: ROHM Semiconductor
SiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide
SiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide
товару немає в наявності
В кошику
од. на суму грн.