SCT2H12NYTB Rohm Semiconductor
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 370.33 грн |
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Технічний опис SCT2H12NYTB Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 410µA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V.
Інші пропозиції SCT2H12NYTB
| Фото | Назва | Виробник | Інформація |
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SCT2H12NYTB | Виробник : Rohm Semiconductor |
 Description: SICFET N-CH 1700V 4A TO268Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V |
товару немає в наявності |
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SCT2H12NYTB | Виробник : Rohm Semiconductor |
Description: SICFET N-CH 1700V 4A TO268 Packaging: Cut Tape (CT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V |
товару немає в наявності |
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SCT2H12NYTB | Виробник : ROHM Semiconductor |
SiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide |
товару немає в наявності |