SCT3017ALHRC11 Rohm Semiconductor

Description: SICFET N-CH 650V 118A TO247N, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 23.5mA, Power Dissipation (Max): 427W, Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.