SCT3030ALHRC11 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2596.05 грн |
| 30+ | 2497.66 грн |
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Технічний опис SCT3030ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Power Dissipation (Max): 262W, Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SCT3030ALHRC11
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SCT3030ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Mounting: THT Drain-source voltage: 650V Technology: SiC |
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 |
SCT3030ALHRC11 | ROHM |
Description: ROHM - SCT3030ALHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247N Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650 Dauer-Drainstrom Id: 70 Rds(on)-Messspannung Vgs: 18 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 262 Bauform - Transistor: TO-247N Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal MOSFET-Konfiguration: Eins Betriebswiderstand, Rds(on): 0.03 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 5.6 SVHC: Lead (08-Jul-2021) |
товару немає в наявності |
В кошику од. на суму грн. |
| SCT3030ALHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Mounting: THT
Drain-source voltage: 650V
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Mounting: THT
Drain-source voltage: 650V
Technology: SiC
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| SCT3030ALHRC11 |
|
Виробник: ROHM
Description: ROHM - SCT3030ALHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247N
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650
Dauer-Drainstrom Id: 70
Rds(on)-Messspannung Vgs: 18
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 262
Bauform - Transistor: TO-247N
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
MOSFET-Konfiguration: Eins
Betriebswiderstand, Rds(on): 0.03
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 5.6
SVHC: Lead (08-Jul-2021)
Description: ROHM - SCT3030ALHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247N
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650
Dauer-Drainstrom Id: 70
Rds(on)-Messspannung Vgs: 18
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 262
Bauform - Transistor: TO-247N
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
MOSFET-Konfiguration: Eins
Betriebswiderstand, Rds(on): 0.03
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 5.6
SVHC: Lead (08-Jul-2021)
товару немає в наявності
В кошику
од. на суму грн.