SCT3030ALHRC11 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
Відгуки про товар
Написати відгук
Технічний опис SCT3030ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 262W, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SCT3030ALHRC11 за ціною від 2807.81 грн до 3454.55 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SCT3030ALHRC11 | Виробник : ROHM Semiconductor |
SiC MOSFETs 650V 70A 262W SIC 30mOhm TO-247N |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
|
||||||
| SCT3030ALHRC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Mounting: THT Drain-source voltage: 650V Technology: SiC |
товару немає в наявності |