SCT3030AW7TL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
| Кількість | Ціна |
|---|---|
| 1+ | 2232.78 грн |
| 10+ | 1758.79 грн |
| 100+ | 1696.86 грн |
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Технічний опис SCT3030AW7TL Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 267W, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-263-7, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V.
Інші пропозиції SCT3030AW7TL за ціною від 1680.80 грн до 2560.49 грн
| Фото | Назва | Виробник | Інформація |
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SCT3030AW7TL | Виробник : ROHM Semiconductor |
SiC MOSFETs TO263 650V 70A N-CH SIC |
на замовлення 978 шт: термін постачання 21-30 дні (днів) |
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SCT3030AW7TL | Виробник : Rohm Semiconductor |
Description: SICFET N-CH 650V 70A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-263-7 Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V |
товару немає в наявності |
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| SCT3030AW7TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Kind of package: reel; tape Case: TO263-7 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 267W Mounting: SMD Drain-source voltage: 650V Technology: SiC |
товару немає в наявності |