SCT3060ALHRC11 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1506.90 грн |
| 10+ | 1108.27 грн |
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Технічний опис SCT3060ALHRC11 ROHM Semiconductor
Description: SICFET N-CH 650V 39A TO247N, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 6.67mA, Power Dissipation (Max): 165W, Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SCT3060ALHRC11 за ціною від 1008.55 грн до 1631.71 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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SCT3060ALHRC11 | Rohm Semiconductor |
 Description: SICFET N-CH 650V 39A TO247NQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Power Dissipation (Max): 165W Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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| SCT3060ALHRC11 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247N
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Power Dissipation (Max): 165W
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 650V 39A TO247N
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Power Dissipation (Max): 165W
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1631.71 грн |
| 30+ | 1033.83 грн |
| 120+ | 1008.55 грн |