SCT3080AW7TL ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 900.43 грн |
| 10+ | 642.26 грн |
| 100+ | 534.32 грн |
| 500+ | 532.25 грн |
| 1000+ | 528.80 грн |
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Технічний опис SCT3080AW7TL ROHM Semiconductor
Description: SICFET N-CH 650V 29A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Power Dissipation (Max): 125W, Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Інші пропозиції SCT3080AW7TL за ціною від 645.86 грн до 914.87 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
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SCT3080AW7TL | Rohm Semiconductor |
 Description: SICFET N-CH 650V 29A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 5mA Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Power Dissipation (Max): 125W |
на замовлення 884 шт: термін постачання 21-31 дні (днів) |
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| SCT3080AW7TL |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 29A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Power Dissipation (Max): 125W
Description: SICFET N-CH 650V 29A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Power Dissipation (Max): 125W
на замовлення 884 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 914.87 грн |
| 10+ | 645.86 грн |