Технічний опис SCT30N120D2 STMicroelectronics
Description: SICFET N-CH 1200V 40A HIP247, Packaging: Tray, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V.
Інші пропозиції SCT30N120D2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SCT30N120D2 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube |
товару немає в наявності |
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| SCT30N120D2 | Виробник : STMicroelectronics |
Silicon carbide Power MOSFET |
товару немає в наявності |
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| SCT30N120D2 | Виробник : STMicroelectronics |
Description: SICFET N-CH 1200V 40A HIP247 Packaging: Tray Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V |
товару немає в наявності |
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SCT30N120D2 | Виробник : STMicroelectronics | MOSFET PTD NEW MAT & PWR SOLUTION |
товару немає в наявності |