SCT30N120H STMicroelectronics
на замовлення 832 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2028.33 грн |
| 10+ | 1636.63 грн |
| 100+ | 1257.83 грн |
| 1000+ | 1256.31 грн |
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Технічний опис SCT30N120H STMicroelectronics
Description: SICFET N-CH 1200V 40A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V.
Інші пропозиції SCT30N120H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SCT30N120H | Виробник : STMicroelectronics |
 Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R |
товару немає в наявності |
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| SCT30N120H | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R |
товару немає в наявності |
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SCT30N120H | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R |
товару немає в наявності |
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SCT30N120H | Виробник : STMicroelectronics |
Description: SICFET N-CH 1200V 40A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V |
товару немає в наявності |
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SCT30N120H | Виробник : STMicroelectronics |
Description: SICFET N-CH 1200V 40A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V |
товару немає в наявності |
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| SCT30N120H | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 90A; 230W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 90A Power dissipation: 230W Case: H2PAK-2 Gate-source voltage: -10...25V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |