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SCT30N120H

SCT30N120H STMicroelectronics

sct30n120h.pdf
Виробник: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm
на замовлення 832 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SCT30N120H STMicroelectronics

Description: SICFET N-CH 1200V 40A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V.

Інші пропозиції SCT30N120H

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SCT30N120H SCT30N120H STMicroelectronics sct30n120h.pdf Description: SICFET N-CH 1200V 40A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
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SCT30N120H SCT30N120H STMicroelectronics sct30n120h.pdf Description: SICFET N-CH 1200V 40A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
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SCT30N120H STMicroelectronics sct30n120h.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 90A; 230W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 0.1Ω
Pulsed drain current: 90A
Power dissipation: 230W
Gate charge: 105nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -10...25V
Kind of package: reel; tape
Case: H2PAK-2
Mounting: SMD
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SCT30N120H SCT30N120H STMicroelectronics sct30n120h.pdf Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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SCT30N120H sct30n120h.pdf
SCT30N120H
Виробник: STMicroelectronics
Description: SICFET N-CH 1200V 40A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
SCT30N120H sct30n120h.pdf
SCT30N120H
Виробник: STMicroelectronics
Description: SICFET N-CH 1200V 40A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
SCT30N120H sct30n120h.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 90A; 230W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 0.1Ω
Pulsed drain current: 90A
Power dissipation: 230W
Gate charge: 105nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -10...25V
Kind of package: reel; tape
Case: H2PAK-2
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
SCT30N120H sct30n120h.pdf
SCT30N120H
Виробник: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.