Технічний опис SCT30N120H STMicroelectronics
Description: SICFET N-CH 1200V 40A H2PAK-2, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 270W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції SCT30N120H
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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SCT30N120H | STMicroelectronics |
 Description: SICFET N-CH 1200V 40A H2PAK-2Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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SCT30N120H | STMicroelectronics |
Description: SICFET N-CH 1200V 40A H2PAK-2 Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| SCT30N120H |
|
Виробник: STMicroelectronics
Description: SICFET N-CH 1200V 40A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: SICFET N-CH 1200V 40A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SCT30N120H |
|
Виробник: STMicroelectronics
Description: SICFET N-CH 1200V 40A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: SICFET N-CH 1200V 40A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.