SCT3105KRC15 Rohm Semiconductor

Description: 1200V, 24A, 4-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tj), Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 3.81mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V.