SCT3120AW7TL Rohm Semiconductor

Description: SICFET N-CH 650V 21A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 5.6V @ 3.33mA, Power Dissipation (Max): 100W, Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).