SCT4013DW7TL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 750V, 98A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tj)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Відгуки про товар
Написати відгук
Технічний опис SCT4013DW7TL Rohm Semiconductor
Description: 750V, 98A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tj), Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V, Power Dissipation (Max): 267W, Vgs(th) (Max) @ Id: 4.8V @ 30.8mA, Supplier Device Package: TO-263-7L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V.
Інші пропозиції SCT4013DW7TL за ціною від 1329.60 грн до 2095.36 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCT4013DW7TL | ROHM Semiconductor |
SiC MOSFETs TO263 750V 98A N-CH SIC |
на замовлення 1520 шт: термін постачання 21-30 дні (днів) |
|
||||||||
|
SCT4013DW7TL | Rohm Semiconductor |
Description: 750V, 98A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tj) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V |
на замовлення 1085 шт: термін постачання 21-31 дні (днів) |
|
| SCT4013DW7TL |
![]() |
Виробник: ROHM Semiconductor
SiC MOSFETs TO263 750V 98A N-CH SIC
SiC MOSFETs TO263 750V 98A N-CH SIC
на замовлення 1520 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1932.15 грн |
| 10+ | 1567.94 грн |
| 100+ | 1341.33 грн |
| 1000+ | 1329.60 грн |
| SCT4013DW7TL |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 98A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tj)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Description: 750V, 98A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tj)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2095.36 грн |
| 10+ | 1479.51 грн |
| 100+ | 1449.78 грн |


