Технічний опис SCT4026DRC15 ROHM Semiconductor
Description: 750V, 26M, 4-PIN THD, TRENCH-STR, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +21V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.8V @ 15.4mA, Power Dissipation (Max): 176W, Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції SCT4026DRC15 за ціною від 698.60 грн до 1384.74 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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SCT4026DRC15 | Rohm Semiconductor |
 Description: 750V, 26M, 4-PIN THD, TRENCH-STRInput Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Power Dissipation (Max): 176W Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 3337 шт: термін постачання 21-31 дні (днів) |
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| SCT4026DRC15 |
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Виробник: Rohm Semiconductor
Description: 750V, 26M, 4-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 750V, 26M, 4-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 3337 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1384.74 грн |
| 10+ | 953.38 грн |
| 450+ | 698.60 грн |