SCT4036DEC11 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 970.78 грн |
| 30+ | 566.75 грн |
| 120+ | 486.20 грн |
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Технічний опис SCT4036DEC11 Rohm Semiconductor
Description: 750V, 42A, 3-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V, Power Dissipation (Max): 136W, Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V.