SCT4045DRHRC15 ROHM Semiconductor

Description: 750V, 34A, 4-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V, Power Dissipation (Max): 115W, Vgs(th) (Max) @ Id: 4.8V @ 8.89mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V, Qualification: AEC-Q101.