SCT4062KEHRC11 Rohm Semiconductor

Description: 1200V, 26A, 3-PIN THD, TRENCH-ST, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +21V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 4.8V @ 6.45mA, Power Dissipation (Max): 115W, Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V, Qualification: AEC-Q101, Grade: Automotive.