SCTH100N65G2-7AG STMicroelectronics

Description: SICFET N-CH 650V 95A H2PAK-7, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 5V @ 5mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).