SCTH100N65G2-7AG STMicroelectronics
Виробник: STMicroelectronics
Description: SICFET N-CH 650V 95A H2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: H2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1+ | 1960.25 грн |
| 10+ | 1381.91 грн |
| 100+ | 1317.56 грн |
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Технічний опис SCTH100N65G2-7AG STMicroelectronics
Description: SICFET N-CH 650V 95A H2PAK-7, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 5V @ 5mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Інші пропозиції SCTH100N65G2-7AG за ціною від 1126.31 грн до 2024.72 грн
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SCTH100N65G2-7AG | Виробник : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2 |
на замовлення 805 шт: термін постачання 21-30 дні (днів) |
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SCTH100N65G2-7AG | Виробник : STMicroelectronics |
Description: SICFET N-CH 650V 95A H2PAK-7 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: H2PAK-7 Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
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| SCTH100N65G2-7AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 95A; Idm: 260A; 360W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 95A Pulsed drain current: 260A Power dissipation: 360W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 26mΩ Mounting: SMD Gate charge: 162nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |