SCTH40N120G2V-7 STMicroelectronics
Виробник: STMicroelectronicsMOSFET Silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C)
на замовлення 999 шт:
термін постачання 336-345 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1464.3 грн |
| 10+ | 1278.31 грн |
| 25+ | 1096.22 грн |
| 50+ | 1076.19 грн |
| 100+ | 964.03 грн |
| 250+ | 954.69 грн |
| 500+ | 873.24 грн |
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Технічний опис SCTH40N120G2V-7 STMicroelectronics
Description: SILICON CARBIDE POWER MOSFET 120, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V.
Інші пропозиції SCTH40N120G2V-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SCTH40N120G2V-7 | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) H2PAK |
товар відсутній |
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| SCTH40N120G2V-7 | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) H2PAK |
товар відсутній |
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| SCTH40N120G2V-7 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SCTH40N120G2V-7 | Виробник : STMicroelectronics |
Description: SILICON CARBIDE POWER MOSFET 120 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V |
товар відсутній |
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| SCTH40N120G2V-7 | Виробник : STMicroelectronics |
Description: SILICON CARBIDE POWER MOSFET 120 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V |
товар відсутній |
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| SCTH40N120G2V-7 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товар відсутній |