SCTH90N65G2V-7 STMicroelectronics
Виробник: STMicroelectronics
Description: SICFET N-CH 650V 90A H2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: H2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
| Кількість | Ціна |
|---|---|
| 1+ | 1593.29 грн |
| 10+ | 1110.46 грн |
| 100+ | 910.60 грн |
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Технічний опис SCTH90N65G2V-7 STMicroelectronics
Description: SICFET N-CH 650V 90A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V.
Інші пропозиції SCTH90N65G2V-7 за ціною від 1246.89 грн до 2111.72 грн
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SCTH90N65G2V-7 | Виробник : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an |
на замовлення 13945 шт: термін постачання 21-30 дні (днів) |
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SCTH90N65G2V-7 | Виробник : STMicroelectronics |
Description: SICFET N-CH 650V 90A H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V |
товару немає в наявності |